DMN2019UTS-13

DMN2019UTS 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(ON) max ID max TA = 25°C 18.5mΩ @ VGS = 10V 5.4 A 21mΩ @ VGS = 4.5V 5.0 A 24mΩ @ VGS = 2.5V 4.6 A 31mΩ @ VGS = 1.8V 3.5 A NEW PRODUCT V(BR)DSS 20V Features • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed ESD Protected up to 2KV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 standards for High Reliability Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data Applications • • • • • Power management functions Load Switch • • Case: TSSOP-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Weight: 0.039 grams (approximate) D D TSSOP-8 1 2 3 4 D S1 S1 G1 D S2 S2 G2 8 7 6 5 G1 G2 S1 ESD PROTECTED TO 2kV Top View Top View Pin Configuration Bottom View S2 N-Channel N-Channel Internal Schematic Ordering Information (Note 4) Part Number DMN2019UTS-13 Notes: Case TSSOP-8 Packaging 2500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.  3. Halogen- and Antimony-free "Green” products are defined as those which contain