DMN2075UDW
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
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•
•
•
•
•
•
ID
RDS(on) max
V(BR)DSS
TA = 25°C
48mΩ @ VGS = 4.5V
2.8A
59mΩ @ VGS = 2.5V
2.6A
20V
Description and Applications
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
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•
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
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Case: SOT363
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish ⎯ Matte Tin annealed over Alloy42 leadframe.
Solderable per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Weight: 0.006 grams (approximate)
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DC-DC Converters
Power management functions
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SOT363
D
D
S
D
D
G
Top View
Top View
Internal Schematic
Ordering Information (Note 3)
Part Number
DMN2075UDW-7
Notes:
Case
SOT363
Packaging
3000/Tape & Reel
1. No purposefully added lead.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com
Marking Information
G22
Date Code Key
Year
Code
Month
Code
2011
Y
Jan
1
2012
Z
Feb
2
DMN2075UDW
Document number: DS35542 Rev. 1 - 2
Mar
3
YM
NEW PRODUCT
Benefit and Features
G22 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
2013
A
Apr
4
May
5
2014
B
Jun
6
1 of 6
www.diodes.com
2015
C
Jul
7
Aug
8
2016
D
Sep
9
Oct
O
2017
E
Nov
N
Dec
D
September 2011
© Diodes Incorporated
DMN2075UDW
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
VDSS
VGSS
NEW PRODUCT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = 4.5V
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
Steady
State
t
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