DMN2080UCB4-7

DMN2080UCB4 N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT INFORMATION ADVANCED ADVANCE INFORMATION Product Summary (Typ. @ VGS = 4.5V, TA = +25°C) Features   BVDSS RDS(ON) Qg Qgd ID 20V 43mΩ 7.4nC 1.5nC 4.0A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) with thin WLCSP packaging process and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications     Built-in G-S Protection Diode Against ESD 2kV HBM Trench-MOS Technology with The Lowest RDS(ON): RDS(ON) = 43mΩ to Minimize On-State Losses VGS(TH) = 0.7V Typ. for A Low Turn-On Potential     CSP with Footprint 0.8mm × 0.8mm Height = 0.35mm for Low Profile Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data  Case: X2-WLB0808-4 (Type B)  Terminal Connections: See Diagram Below DC-DC Converters Battery Management Load Switch Top-View Pin Configuration Equivalent Circuit Ordering Information (Note 4) Part Number DMN2080UCB4-7 Notes: Case X2-WLB0808-4 (Type B) Packaging 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain