DMN2320UFB4-7B

DMN2320UFB4 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V(BR)DSS RDS(on) 20V 320mΩ @ VGS= 4.5V 500mΩ @ VGS= 2.5V 1000mΩ @ VGS= 1.8V Footprint of just 0.6mm2 – thirteen times smaller than SOT23 0.4mm profile – ideal for low profile applications Low Gate Threshold Voltage Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) ESD Protected Gate 2KV • • • • • • • ID max TA = +25°C 1.0A 0.65A 0.4A Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • • • Case: X2-DFN1006-3 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.001 grams (Approximate) • • Load switch • D X2-DFN1006-3 G S D G ESD PROTECTED TO 2kV Bottom View Top View Internal Schematic Gate Protection Diode S Equivalent Circuit Ordering Information (Note 4) Part Number DMN2320UFB4-7B Notes: Marking ND Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain