DMN2400UFB-7

DMN2400UFB N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS Features and Benefits RDS(ON) max ID max TA = +25°C 0.55Ω @ VGS = 4.5V 0.75A 0.75Ω @ VGS = 2.5V 0.63A 20V  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  ESD Protected up to 1.5kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it  Case: X1-DFN1006-3  Case Material: Molded Plastic, "Green" Molding Compound; ideal for high-efficiency power-management applications. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Battery Charging  Terminal Connections Indicator: Collector Dot  Power Management Functions   DC-DC Converters Terminals: Finish  NiPdAu over Copper Leadframe; Solderable per MIL-STD-202, Method 208 e4  Portable Power Adaptors  Weight: 0.001 grams (Approximate) Drain X1-DFN1006-3 S Gate D G ESD PROTECTED TO 1.5kV Bottom View Top View Package Pin Configuration Gate Protection Diode Source Equivalent Circuit Ordering Information (Note 4) Part Number DMN2400UFB-7 DMN2400UFB-7B Notes: Case X1-DFN1006-3 X1-DFN1006-3 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain