DMN2400UFDQ-7

DMN2400UFDQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(ON) ID TA = +25°C 0.6Ω @ VGS = 4.5V 0.9A 0.8Ω @ VGS = 2.5V 0.7A 1.0Ω @ VGS = 1.8V 0.5A 1.6Ω @ VGS = 1.5V 0.3A PRODUCT INFORMATION ADVANCED NEW BVDSS 20V Features and Benefits          Description and Applications Mechanical Data   This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.    Low On-Resistance Very Low Gate Threshold Voltage, 1.0V Max. Low Input Capacitance Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4)   Power Management Functions Battery Operated Systems and Solid-State Relays Load Switch   Case: U-DFN1212-3 (Type C) Case Material: Molded Plastic; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper Leadframe; Solderable per MIL-STD-202, Method 208 e4 Terminal Connections: See Diagram Weight: 0.005 grams (Approximate) U-DFN1212-3 (Type C) D S pin 1 D G G Gate Protection Diode ESD PROTECTED Bottom View Top View S Pin-Out Top View Equivalent Circuit Ordering Information (Note 5) Part Number DMN2400UFDQ-7 DMN2400UFDQ-13 Notes: Case U-DFN1212-3 (Type C) U-DFN1212-3 (Type C) Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain