DMN2400UV-7

DMN2400UV-7

  • 厂商:

    BCDSEMI(美台)

  • 封装:

    SOT-563

  • 描述:

    双N沟道,20V,1.33A,0.48Ω@5V

  • 详情介绍
  • 数据手册
  • 价格&库存
DMN2400UV-7 数据手册
DMN2400UV DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS(ON) Max ID Max TA = +25°C 0.48Ω @ VGS = 5V 1.33A 0.7Ω @ VGS = 2.5V 1.2A BVDSS 20V          Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications     Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q101, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Mechanical Data Power Management Functions Battery Operated Systems and Solid-State Relays Load Switch       Case: SOT563 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.003 grams (Approximate) SOT563 ESD PROTECTED Top View Bottom View Top View Pin Out Internal Schematic Ordering Information (Note 4) Part Number DMN2400UV-7 DMN2400UV-13 Notes: Case SOT563 SOT563 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain
DMN2400UV-7
物料型号:DMN2400UV

器件简介: DMN2400UV 是一款新一代MOSFET,旨在降低导通电阻(RDS(ON))的同时保持优越的开关性能,适用于高效率的电源管理应用。


引脚分配: - D1:漏极 - G:栅极 - S1:源极 - D2:漏极 - S2:源极 - G2:栅极

参数特性: - 漏极-源极电压(BVpss):20V - 栅极-源极电压(VGss):4.5V - 导通电阻(RDS(ON)):典型值0.3到0.48欧姆 - 栅极阈值电压(VGS(TH)):0.5V到0.9V - 输入电容(Ciss):36.0pF - 输出电容(Coss):5.7pF - 反向传输电容(Crss):4.2pF - 栅极电阻(Rg):68欧姆 - 总栅极电荷(Qg):0.5nC - 栅极-源极电荷(Qas):0.07nC - 栅极-漏极电荷(Qad):0.1nC

功能详解: - 低导通电阻:有助于减少功率损耗 - 低栅极阈值电压:简化驱动要求 - 低输入电容:提高开关速度 - 快速开关速度:减少开关损耗 - 低输入/输出漏电:提高系统效率 - ESD保护栅极:增强器件的可靠性 - 完全无铅和RoHS兼容:符合环保要求

应用信息: - 电源管理功能 - 电池操作系统和固态继电器负载开关

封装信息: - 封装类型:SOT563 - 封装材料:模塑塑料,“绿色”模塑化合物 - UL可燃性分类等级:94V-0 - 湿度敏感性:J-STD-020标准1级 - 端子连接:详见图示 - 端子:表面处理为铜上镀锡 - 引线框架:可焊性符合MIL-STD-202方法208 - 重量:约0.003克

有关DMN2400UV的更多详细信息和应用示例,请参阅Diodes Incorporated官方网站或联系当地的Diodes代表。
DMN2400UV-7 价格&库存

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