DMN2450UFB4-7B

DMN2450UFB4-7B

  • 厂商:

    BCDSEMI(美台)

  • 封装:

    DFN1006-3

  • 描述:

    表面贴装型 N 通道 20 V 1A(Ta) 500mW(Ta) X2-DFN1006-3

  • 详情介绍
  • 数据手册
  • 价格&库存
DMN2450UFB4-7B 数据手册
DMN2450UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary 0.4Ω @ VGS = 4.5V ID Max TA = +25°C 1.0A 0.5Ω @ VGS = 2.5V 0.9A 0.7Ω @ VGS = 1.8V 0.8A BVDSS 20V Features and Benefits RDS(ON) Max        Footprint of just 0.6mm2 – Thirteen Times Smaller than SOT23 0.4mm Profile – Ideal for Low Profile Applications Low Gate Threshold Voltage Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.    Case: X2-DFN1006-3 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.001 grams (Approximate)   Load Switch  D X2-DFN1006-3 G S D G ESD Protected Gate Gate Protection Diode Equivalent Circuit Top View Internal Schematic Bottom View S Ordering Information (Note 4) Part Number DMN2450UFB4-7B DMN2450UFB4-7R Notes: Marking 45 45 Reel Size (inches) 7 7 Tape Width (mm) 8 8 Tape Pitch (mm) 2 4 Quantity per Reel 10,000 3,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain
DMN2450UFB4-7B
物料型号为 DMN2450UFB4,这是一款 N-CHANNEL ENHANCEMENT MODE MOSFET。

器件简介指出其具有0.6mm²的小型封装,非常适合低高度应用,具有快速开关速度、低阈值电压和抗静电保护门。

引脚分配从顶视图和底视图可以确认,包括D(漏极)、G(栅极)、S(源极)和内部结构。

参数特性包括在25°C条件下最大漏源电压(BVDss)20V、最大漏源电阻(RDS(ON) Max)0.4欧姆@Vas=4.5V,最大电流(lo Max TA=+25°C)1.0A。

功能详解强调了其设计用于最小化导通电阻(RDS(ON))同时保持优越的开关性能,适合高效率电源管理应用。

应用信息中提到了作为负载开关使用,并描述了终端的详细信息。

封装信息中指出了使用X2-DFN1006-3封装,材料为模塑料,符合RoHS和无卤要求。
DMN2450UFB4-7B 价格&库存

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DMN2450UFB4-7B
  •  国内价格
  • 10+0.19053
  • 100+0.18846
  • 2000+0.18563
  • 4000+0.18006

库存:2903