DMN2450UFD-7

DMN2450UFD N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID TA = +25°C  Low On-Resistance  Very Low Gate Threshold Voltage, 1.0V Max 0.6Ω @ VGS = 4.5V 0.9A  Low Input Capacitance 0.8Ω @ VGS = 2.5V 0.7A  Fast Switching Speed 1.0Ω @ VGS = 1.8V 0.5A  ESD Protected Gate 0.3A  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) BVDSS RDS(ON) 20V 1.6Ω @ VGS = 1.5V Description and Applications Mechanical Data This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.  Case: X1-DFN1212-3  Case Material: Molded Plastic; UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish – NiPdAu over Copper Solderable per MIL-STD-202, Method 208 e4  Power Management Functions  Battery Operated Systems and Solid-State Relays  Terminal Connections: See Diagram  Load Switch  Weight: 0.005 grams (Approximate) Leadframe; D G Gate Protection Diode ESD PROTECTED Top View Bottom View S Equivalent Circuit Pin-out Top View Ordering Information (Note 4) Part Number DMN2450UFD-7 Notes: Case X1-DFN1212-3 Packaging 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain