DMN2550UFA
20V N-CHANNEL ENHANCEMENT MODE MOSFET
NEW PRODUCT
Product Summary
V(BR)DSS
RDS(ON) max
20V
0.45 Ω @ VGS = 4.5V
0.55 Ω @ VGS = 2.5V
0.75 Ω @ VGS = 1.8V
1.0 Ω @ VGS = 1.5V
Features and Benefits
ID max
TA = +25°C
0.6 A
Description
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Low Package Profile, 0.4mm Maximum Package Height
0.48mm Package Footprint, 16 Times Smaller than SOT23
Low On-Resistance
Very Low Gate Threshold Voltage, 1.0V Max
2
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: X2-DFN0806-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Applications
General Purpose Interfacing Switch
Power Management Functions
Analog Switch
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e4
Weight: 0.001 grams (Approximate)
Drain
Body
Diode
S
D
G
Top View
Package Pin Configuration
ESD PROTECTED
Bottom View
Gate
Gate
Protection
Diode
Source
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN2550UFA-7B
Notes:
Case
X2-DFN0806-3
Packaging
10K/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain
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