DMN2991UFZ
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
Features and Benefits
20V
ID Max
RDS(ON) Max
TA = +25°C
0.99Ω @ VGS = 4.5V
0.55A
1.2Ω @ VGS = 2.5V
0.50A
1.8Ω @ VGS = 1.8V
0.41A
2.4Ω @ VGS = 1.5V
0.35A
Low Package Profile, 0.42mm Maximum Package Height
0.62mm × 0.62mm Package Footprint
Low On-Resistance
Very Low Gate Threshold Voltage, 1.0V Maximum
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description
Mechanical Data
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) yet maintain superior switching performance, making it ideal
for high-efficiency power management applications.
Applications
General Purpose Interfacing Switch
Power Management Functions
Analog Switch
Case: X2-DFN0606-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish—NiPdAu over Copper Leadframe. Solderable
per MIL-STD-202, Method 208 e4
Weight: 0.001 grams (Approximate)
X2-DFN0606-3
ESD PROTECTED
Bottom View
Equivalent Circuit
Top View
Package Pin Configuration
Ordering Information (Note 4)
Notes:
Part Number
Case
Packaging
DMN2991UFZ-7B
X2-DFN0606-3
10k/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain
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