DMN3018SSS-13

DMN3018SSS 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT ADVANCE INFORMATION V(BR)DSS Features and Benefits RDS(ON) max ID max TA = 25°C 21mΩ @ VGS = 10V 7.3A • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed ESD Protected Gate “Green” component and RoHS compliant (Notes 1 & 2) 35mΩ @ VGS = 4.5V 5.5A • Qualified to AEC-Q101 standards for High Reliability 30V Mechanical Data Description and Applications • • This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • • • • Backlighting Power Management Functions DC-DC Converters • Case: SO-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (approximate) Drain SO-8 ESD PROTECTED S D S D S D G D Top View Top View Pin Configuration Body Diode Gate Gate Protection Diode Source Equivalent Circuit Per Element Ordering Information (Note 3) Part Number DMN3018SSS-13 Notes: Case SO-8 Packaging 2500/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free. 2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information Top View 8 5 Logo N3018SS Part no. YY WW Xth week: 01 ~ 53 Year: “11” = 2011 1 DMN3018SSS Document number: DS35501 Rev. 5 - 2 4 1 of 6 www.diodes.com February 2012 © Diodes Incorporated DMN3018SSS Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS NEW PRODUCT ADVANCE INFORMATION Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 10V Steady State t