DMN3020LK3-13

A Product Line of Diodes Incorporated DISCONTINUED DMN3020LK3 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS Features and Benefits ID RDS(on) TA = 25°C 20mΩ @ VGS= 10V 16.7A 34mΩ @ VGS= 4.5V 12.6A • Low on-resistance • Fast switching speed • “Green” Component and RoHS compliant 30V Mechanical Data • Case: TO252-3L Description and Applications • This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Case Material: Molded Plastic “Green” Molding Compound, UL Flammability Classification Rating 94V-0 (Note 1) • Moisture Sensitivity: Level 1 per J-STD-020D • Terminal Connections: See Diagram • Terminals: Matte Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 • Backlighting • Marking Information: See Below • DC-DC Converters • • Ordering Information: See Below Power management functions • Weight: 0.33 grams (approximate) D D G D G TOP VIEW Ordering Information S S Equivalent Circuit PIN OUT -TOP VIEW (Note 1) Product Marking Reel size (inches) Tape width (mm) Quantity per reel DMN3020LK3-13 N3020L 13 16 2,500 Notes: 1. Diodes, Inc. defines “Green” products as those which are Eu RoHS compliant and contain no halogens or antimony compounds; further information about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website. Marking Information YYWW N3020L DMN3020LK3 Document Revision: 2 = Manufacturer’s Marking N3020L = Product Type Marking Code YYWW = Date Code Marking YY = Last two digits of year (ex: 09 = 2009) WW = Week (01-52) 1 of 8 www.diodes.com May 2013 © Diodes Incorporated DISCONTINUED A Product Line of Diodes Incorporated DMN3020LK3 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGS Drain-Source voltage Gate-Source voltage Continuous Drain current VGS = 10V Pulsed Drain current VGS= 10V Continuous Source current (Body diode) Pulsed Source current (Body diode) (Note 3) TA=70°C (Note 3) (Note 2) (Note 4) (Note 3) (Note 4) ID IDM IS ISM Value 30 ±20 16.7 13.3 11.3 51 12 51 Unit V V Value 4.1 32.5 8.9 71.4 2.17 17.4 30.8 14.0 57.6 2.24 -55 to 150 Unit A A A A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol (Note 2) Power dissipation Linear derating factor (Note 3) PD (Note 5) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and storage temperature range Notes: (Note 2) (Note 3) (Note 5) (Note 6) RθJA RθJL TJ, TSTG W mW/°C °C/W °C/W °C 2. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 3. Same as note 2, except the device is measured at t ≤ 10 sec. 4. Same as note 2, except the device is pulsed with D = 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature. 5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 6. Thermal resistance from junction to solder-point (at the end of the drain lead). DMN3020LK3 Document Revision: 2 2 of 8 www.diodes.com May 2013 © Diodes Incorporated A Product Line of Diodes Incorporated DISCONTINUED DMN3020LK3 Thermal Characteristics RDS(on) ID Drain Current (A) ID Drain Current (A) RDS(on) 10 Limit DC 1 1s 100ms 100m 10m 100m 1 DC 1s 100ms 100m 10ms Tamb=25°C 25mm x 25mm 1oz FR4 10 Limit 1ms 100µs 1 10 10m 0.1 VDS Drain-Source Voltage (V) 10ms Tamb=25°C 50mm x 50mm 2oz FR4 1ms 100µs 1 10 VDS Drain-Source Voltage (V) Safe Operating Area Safe Operating Area 50 Tamb=25°C 25mm x 25mm 1oz FR4 40 D=0.5 30 20 D=0.2 D=0.1 D=0.05 10 Single Pulse 0 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Thermal Resistance (°C/W) Thermal Resistance (°C/W) 35 60 Single Pulse Tamb=25°C 100 50mm x 50mm 2oz FR4 10 25mm x 25mm 1oz FR4 1 100µ 1m 10m 100m 1 10 100 Pulse Width (s) 25 20 D=0.5 15 10 Document Revision: 2 D=0.1 D=0.2 D=0.05 5 0 100µ 1m Single Pulse 10m 100m 1 10 100 1k Pulse Width (s) 1k 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 50mm x 50mm 2oz FR4 25mm x 25mm 1oz FR4 0 Pulse Power Dissipation DMN3020LK3 Tamb=25°C 50mm x 50mm 2oz FR4 Transient Thermal Impedance Max Power Dissipation (W) Max Power Dissipation (W) Transient Thermal Impedance 30 20 40 60 80 100 120 140 160 Temperature (°C) Derating Curve 3 of 8 www.diodes.com May 2013 © Diodes Incorporated A Product Line of Diodes Incorporated DISCONTINUED DMN3020LK3 Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 30   V Zero Gate Voltage Drain Current IDSS   0.5 µA VDS= 30V, VGS= 0V Gate-Source Leakage IGSS   ±100 nA VGS= ±20V, VDS= 0V VGS(th) 1.0  3.0 V ID= 250µA, VDS= VGS RDS (ON)   ID = 250µA, VGS= 0V ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance (Note 7) 0.020 0.034 • VGS= 10V, ID= 7.0A VGS= 4.5V, ID= 6.0A gfs  16.5  S VDS= 15V, ID= 7.1A Diode Forward Voltage (Note 7) VSD  0.82 1.2 V IS= 1.7A, VGS= 0V Reverse recovery time (Note 8) trr 12  ns Reverse recovery charge (Note 8) Qrr 4.8  nC Forward Transconductance (Notes 7 & 8)  IS= 2.2A, di/dt= 100A/µs DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss  608  pF Output Capacitance Coss  132  pF Reverse Transfer Capacitance Crss  71  pF Total Gate Charge Qg  6.3  nC Total Gate Charge Qg  12.9  nC Gate-Source Charge Qgs  2.5  nC Gate-Drain Charge Qgd  2.5  nC Turn-On Delay Time (Note 9) tD(on)  2.9  ns Turn-On Rise Time (Note 9) tr  3.3  ns Turn-Off Delay Time (Note 9) tD(off)  16  ns tf  8  ns Turn-Off Fall Time (Note 9) Notes: VDS= 15V, VGS= 0V f= 1MHz VDS= 15V, VGS= 4.5V ID= 7A VDS= 15V, VGS= 10V ID= 7A VDD= 15V, VGS= 10V ID= 1A, RG ≅ 6.0Ω 7. Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2% 8. For design aid only, not subject to production testing. 9. Switching characteristics are independent of operating junction temperatures. DMN3020LK3 Document Revision: 2 4 of 8 www.diodes.com May 2013 © Diodes Incorporated A Product Line of Diodes Incorporated DISCONTINUED DMN3020LK3 Typical Characteristics 5V 10 ID Drain Current (A) T = 150°C 4V 3.5V 3V 1 0.1 2.5V VGS T = 25°C 0.01 ID Drain Current (A) 10V 0.1 1 10V VGS 4V 3.5V 10 3V 2.5V 1 2V 0.1 1.5V 0.01 10 0.1 VDS Drain-Source Voltage (V) 1 10 VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics ID Drain Current (A) VDS = 10V T = 150°C 1 T = 25°C 0.1 2 3 4 VGS Gate-Source Voltage (V) DMN3020LK3 Document Revision: 2 1000 2.5V VGS T = 25°C 100 3V 10 3.5V 1 4V 0.1 0.01 0.01 4.5V 10V 0.1 1 10 ID Drain Current (A) On-Resistance v Drain Current VGS = 10V ID = 7A 1.4 RDS(on) 1.2 1.0 0.8 VGS(th) VGS = VDS ID = 250uA 0.6 0.4 -50 0 50 100 Tj Junction Temperature (°C) 150 Normalised Curves v Temperature ISD Reverse Drain Current (A) RDS(on) Drain-Source On-Resistance (W) Typical Transfer Characteristics Normalised RDS(on) and VGS(th) 1.6 10 10 1 T = 150°C 0.1 T = 25°C 0.01 Vgs = -3V 1E-3 0.2 0.4 0.6 0.8 VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage 5 of 8 www.diodes.com 1.0 May 2013 © Diodes Incorporated A Product Line of Diodes Incorporated DISCONTINUED DMN3020LK3 C Capacitance (pF) 900 800 700 600 500 400 300 200 100 0 VGS = 0V f = 1MHz CISS COSS CRSS 1 10 VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage VGS Gate-Source Voltage (V) Typical Characteristics - continued 10 9 8 7 6 5 4 3 2 1 0 ID = 7A VDS = 15V 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Q - Charge (nC) Gate-Source Voltage v Gate Charge Test Circuits Current regulator QG 50k 12V VG Q GS Same as D.U.T Q GD V DS IG D.U.T ID V GS Charge Basic gate charge waveform Gate charge test circuit V DS 90% RD V GS V DS RG VDD 10% V GS td(on) tr t(on) td(off) tr t(on) Switching time waveforms DMN3020LK3 Document Revision: 2 Switching time test circuit 6 of 8 www.diodes.com May 2013 © Diodes Incorporated A Product Line of Diodes Incorporated DISCONTINUED DMN3020LK3 Package Outline Dimensions DIM Inches Millimeters DIM Inches Min Millimeters Min Max Min Max A 0.086 0.094 2.18 2.39 e A1 - 0.005 - 0.127 H 0.370 0.410 9.40 10.41 b 0.020 0.035 0.508 0.89 L 0.055 0.070 1.40 1.78 b2 0.030 0.045 0.762 1.14 L1 0.108 REF 2.74 REF b3 0.205 0.215 5.21 5.46 L2 0.020 BSC 0.508 BSC c 0.018 0.024 0.457 0.61 L3 0.035 0.065 0.89 1.65 c2 0.018 0.023 0.457 0.584 L4 0.025 0.040 0.635 1.016 D 0.213 0.245 5.41 6.22 L5 0.045 0.060 1.14 1.52 D1 0.205 - 5.21 - • 1° 0° 10° 0° 10° 0° 15° 0° 15° - - - - E 0.250 0.265 6.35 6.73 •° E1 0.170 - 4.32 - - DMN3020LK3 Document Revision: 2 7 of 8 www.diodes.com Max Min 0.090 BSC Max 2.29 BSC May 2013 © Diodes Incorporated A Product Line of Diodes Incorporated DISCONTINUED DMN3020LK3 Suggested Pad Layout 6.2 0.244 3.0 0.118 5.8 0.228 1.6 0.063 2.58 0.101 6.17 0.243 mm inches IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2009, Diodes Incorporated www.diodes.com DMN3020LK3 Document Revision: 2 8 of 8 www.diodes.com May 2013 © Diodes Incorporated