DMN3033LSD
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
RDS(ON) max
ID max
TA = +25°C
20mΩ @ VGS = 10V
6.9A
27mΩ @ VGS = 4.5V
5.8A
V(BR)DSS
30V
Description
Dual N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
Applications
Backlighting
Power Management Functions
DC-DC Converters
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
Weight: 0.072grams (approximate)
D1
SO-8
S1
D1
G1
D1
S2
D2
G2
D2
G1
Top View
G2
S1
Top View
Internal Schematic
D2
N-channel MOSFET
S2
N-channel MOSFET
Ordering Information (Note 4)
Part Number
DMN3033LSD-13
Notes:
Case
SO-8
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain
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