DMN31D5UFZ
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
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Low Package Profile, 0.42mm Maximum Package Height
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0.62mm x 0.62mm Package Footprint
1.5Ω @ VGS = 4.5V
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Low On-Resistance
2.0Ω @ VGS = 2.5V
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Very Low Gate Threshold Voltage, 1.0V max
NEW PRODUCT
ADVANCED
INFORMATION
NEW PRODUCT
V(BR)DSS
30V
Features and Benefits
ID max
TA = +25°C
RDS(ON) max
0.22A
3.0Ω @ VGS = 1.8V
4.5Ω @ VGS = 1.5V
Description
ideal for high efficiency power management applications.
General Purpose Interfacing Switch
Power Management Functions
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Analog Switch
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
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Halogen and Antimony Free. “Green” Device (Note 3)
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Case: X2-DFN0606-3
Case Material: Molded Plastic, “Green” Molding Compound
UL Flammability Classification Rating 94V-0
Applications
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ESD Protected Gate
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Mechanical Data
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
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Moisture Sensitivity: Level 1 per J-STD-020
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Terminals: Finish – NiPdAu over Copper leadframe
Solderable per MIL-STD-202, Method 208 e4
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Weight: 0.001 grams (approximate)
ESD PROTECTED
Bottom View
Equivalent Circuit
Top View
Package Pin Configuration
Ordering Information (Note 4)
Part Number
DMN31D5UFZ-7B
Notes:
Case
X2-DFN0606-3
Packaging
10K/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain
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