DMN32D2LFB4-7

DMN32D2LFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features  Low On-Resistance  Very Low Gate Threshold Voltage, 1.2V Max  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  ESD Protected Gate This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for highefficiency power management applications.  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Applications Mechanical Data  Backlighting  Case: X2-DFN1006-3  Power Management Functions   DC-DC Converters Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Connections: See Diagram  Terminals: Finish – NiPdAu over Copper Leadframe. V(BR)DSS RDS(on) max 30V 1.2Ω @ VGS = 4V 1.5Ω @ VGS = 2.5V 2.2Ω @ VGS = 1.8V ID max TA = +25C 415mA 370mA 300mA Description Solderable per MIL-STD-202, Method 208 e4  Weight: 0.001 grams (Approximate) Drain X2-DFN1006-3 Body Diode Gate S Gate Protection Diode Bottom View ESD PROTECTED D Source Equivalent Circuit G Top View Pin-Out Ordering Information (Note 4) Part Number DMN32D2LFB4-7 DMN32D2LFB4-7B Notes: Marking DV DV Reel size (inches) 7 7 Tape width (mm) 8 8 Quantity per reel 3,000 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain