DMN32D4SDW-13

DMN32D4SDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(ON) max ID max TA = +25°C 0.4Ω @ VGS = 10V 0.65A 0.7Ω @ VGS = 4.5V 0.52A • • • • • • Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications • • • • Motor Control Power Management Functions DC-DC Converters Backlighting Low On-Resistance Low Input Capacitance Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data • • • • • • Case: SOT363 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish  Matte Tin Annealed over Alloy42 Leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.006 grams (Approximate) D1 SOT363 Gate Protection Diode ESD PROTECTED Top View D2 D2 G1 S1 S2 S2 G2 D1 G2 G1 Gate Protection Diode S1 Q2 N-CHANNEAL Q1 N-CHANNEAL Top View Pin out Ordering Information (Note 4) Part Number DMN32D4SDW-7 DMN32D4SDW-13 Notes: Case SOT363 SOT363 Packaging 3,000K/Tape & Reel 10,000K/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain