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DMN33D9LV-7

DMN33D9LV-7

  • 厂商:

    BCDSEMI(美台)

  • 封装:

    SOT563,SOT666

  • 描述:

    MOSFET - 阵列 30V 350mA(Ta) 430mW(Ta) 表面贴装型 SOT-563

  • 详情介绍
  • 数据手册
  • 价格&库存
DMN33D9LV-7 数据手册
DMN33D9LV DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS Features and Benefits 3Ω @ VGS = 4.5V 30V        ID max TA = +25°C RDS(ON) max 350mA 7Ω @ VGS = 2.5V Low On-Resistance Low Input Capacitance Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data Applications       Motor Control Power Management Functions DC-DC Converters Backlighting Case: SOT563 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 3 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.006 grams (Approximate)     SOT563 ESD Protected Top View Top View Pin Out Internal Schematic Ordering Information (Note 4) Part Number DMN33D9LV-7 DMN33D9LV-7A DMN33D9LV-13 DMN33D9LV-13A Notes: Marking 34B 34B 34B 34B Reel Size (inches) 7 7 13 13 Tape Width (mm) 8 8 8 8 Quantity Per Reel 3,000 3,000 10,000 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain
DMN33D9LV-7
物料型号: - 型号:DMN33D9LV

器件简介: - 这是一个N沟道增强型MOSFET,旨在最小化导通电阻(RDS(ON))的同时保持优越的开关性能,非常适合高效率的电源管理应用。

引脚分配: - SOT563封装,引脚包括D1, D2(漏极),G2(栅极),S1, S2(源极)。

参数特性: - 最大漏源电压(BVpss):30V - 最大导通电阻(RDS(ON) max):在Vgs=4.5V时为3mΩ,Vgs=2.5V时为7mΩ - 最大输入电容(Ciss):48pF - 栅极阈值电压(VGS(TH)):0.8V至1.4V - 静态漏源导通电阻(RDS(ON)):在Vas=10V, Ip=250mA时为0.2mΩ至2.4mΩ - 快速开关速度

功能详解: - 低导通电阻、低输入电容、快速开关速度、ESD保护栅极、无铅且完全符合RoHS指令、无卤素和锑的“绿色”器件。

应用信息: - 电机控制、电源管理功能、DC-DC转换器、背光。

封装信息: - 封装类型:SOT563 - 封装材料:模塑塑料,“绿色”模塑料化合物,符合UL 94V-0可燃性分类等级。

订购信息: - 卷带尺寸、胶带宽度以及每卷数量等详细信息。
DMN33D9LV-7 价格&库存

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DMN33D9LV-7
    •  国内价格
    • 5+0.61582
    • 50+0.59984
    • 150+0.58914

    库存:49

    DMN33D9LV-7
    •  国内价格
    • 1+0.80410
    • 200+0.55440
    • 1500+0.50490
    • 3000+0.47080

    库存:2850

    DMN33D9LV-7
    •  国内价格
    • 10+1.31810
    • 200+0.98580
    • 800+0.76430
    • 3000+0.55380
    • 15000+0.49850

    库存:2850