DMN3730UFB-7

A Product Line of Diodes Incorporated DMN3730UFB 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS Features and Benefits ID RDS(on) TA = +25°C 460mΩ @ VGS= 4.5V 0.9A 560mΩ @ VGS= 2.5V 0.7A 30V         0.5mm ultra low profile package for thin application 0.6mm2 package footprint, 10 times smaller than SOT23 Low VGS(th), can be driven directly from a battery Low RDS(on) Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) ESD Protected Gate 2kV Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it   ideal for high efficiency power management applications.       Load Switch Portable Applications Power Management Functions  Case: X1-DFN1006-3 Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – NiPdAu over Copper Leadframe; Solderable per MIL-STD-202, Method 208 e4 Weight: 0.001 grams (Approximate) Drain X1-DFN1006-3 S Body Diode Gate D G ESD PROTECTED TO 2kV Bottom View Top View Internal Schematic Gate Protection Diode Source Equivalent Circuit Ordering Information (Note 4) Part Number DMN3730UFB-7 DMN3730UFB-7B Notes: Marking NE NE Reel size (inches) 7 7 Tape width (mm) 8 8 Quantity per reel 3,000 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain