DMN4800LSSQ-13

DMN4800LSSQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary  Low On-Resistance ID max TA = +25°C  Low Input Capacitance 14mΩ @ VGS = 10V  Fast Switching Speed 8.6A 20mΩ @ VGS = 4.5V  Low Input/Output Leakage 7.1A  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)   Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability  PPAP Capable (Note 4) BVDSS RDS(ON) max 30V NEW PRODUCT Features Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Mechanical Data Applications  Case: SO-8  Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Backlighting  Power Management Functions  Moisture Sensitivity: Level 1 per J-STD-020  DC-DC Converters  Terminals Connections: See Diagram  Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208  Weight: 0.072g (Approximate) D SO-8 S D S D S D G D Top View Internal Schematic Top View G S Equivalent Circuit Ordering Information (Note 5) Part Number DMN4800LSSQ-13 Notes: Case SO-8 Packaging 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain