DMN53D0U-7

DMN53D0U N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Product Summary Features and Benefits V(BR)DSS RDS(ON) 50V 2Ω @ VGS = 5V 2.5Ω @ VGS = 2.5V ID TA = +25°C 300 mA 200 mA • N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it • Case: SOT23 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 ideal for high efficiency power management applications. • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 • Terminal Connections: See Diagram • Weight: 0.008 grams (approximate) SOT23 D ESD protected Top View Ordering Information Top View Equivalent Circuit (Note 4) Part Number DMN53D0U-7 DMN53D0U-13 Notes: S G Case SOT23 SOT23 Packaging 3000/Tape & Reel 10000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain