DMN5L06-7

DMN5L06 SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • • Mechanical Data • • Single N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 2) “Green” Device (Note 3) Case: SOT-23 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.008 grams (approximate) • • • • • • Drain SOT-23 D Gate Source TOP VIEW Pin Out Configuration Equivalent Circuit Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Drain-Gate Voltage RGS ≤ 1.0MΩ Gate-Source Voltage Symbol VDSS VDGR Continuous Pulsed Continuous Pulsed Drain Current (Note 1) Drain Current (Note 1) Thermal Characteristics Value 50 50 ±20 ±40 280 1.5 Units V V Value 350 357 -55 to +150 Units mW °C/W °C VGSS ID IDM Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Symbol Pd RθJA Tj, TSTG @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit BVDSS 50 ⎯ V VGS = 0V, ID = 10μA IDSS ⎯ ⎯ µA VDS = 50V, VGS = 0V nA VGS = ±20V, VDS = 0V V VDS = VGS, ID = 250μA VGS = 2.7V, ID = 0.2A, VGS = 1.8V, ID = 50mA VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA Gate-Body Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage IGSS ⎯ ⎯ ⎯ 0.1 500 ±20 VGS(th) Static Drain-Source On-Resistance RDS (ON) ID(ON) gFS VSD 0.49 ⎯ ⎯ 0.5 200 0.5 ⎯ 1.6 2.2 1.0 ⎯ ⎯ 1.2 3 4 ⎯ ⎯ 1.4 A mS V Ciss Coss Crss ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 50 25 5.0 pF pF pF On-State Drain Current Forward Transconductance Source-Drain Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance V mA A @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Notes: S G TOP VIEW @ TC = 25°C @ TC = 125°C Ω Test Condition VDS = 25V, VGS = 0V f = 1.0MHz 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php 4. Short duration pulse test used to minimize self-heating effect. DMN5L06 Document number: DS30614 Rev. 4 - 2 1 of 4 www.diodes.com October 2007 © Diodes Incorporated ID, DRAIN CURRENT (A) VGS = 10V 8V 6V 5V 4V 3V 8V 10V 5V 6V 4V 0.9 3V 0.6 0.3 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) 10 1 0 0.1 -50 -25 0 25 50 75 100 125 150 Tch, CHANNEL TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) 10 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) NEW PRODUCT DMN5L06 1 VGS, GATE SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current DMN5L06 Document number: DS30614 Rev. 4 - 2 2 of 4 www.diodes.com October 2007 © Diodes Incorporated IDR, REVERSE DRAIN CURRENT (A) RDS(ON), STATIC DRAIN-SOURCE ON-STATE RESISTANCE (Ω) VGS = 0V Pulsed TA = 150°C TA = 125°C TA = 85°C TA = 25°C TA = -25°C T A = -55 °C IDR, REVERSE DRAIN CURRENT (A) |Yfs|, FORWARD TRANSFER ADMITTANCE (S) Tch , CHANNEL TEMPERATURE (° C) Fig. 7 Static Drain-Source On-State Resistance vs. Channel Temperature 1 1 ID, DRAIN CURRENT (A) Fig.10 Forward Transfer Admittance vs. Drain Current 500 Pd, POWER DISSIPATION (mW) NEW PRODUCT DMN5L06 400 300 200 100 RθJA = 357°C/W 0 -50 0 50 100 TA, AMBIENT TEMPERATURE (°C) Fig. 11 Derating Curve - Total DMN5L06 Document number: DS30614 Rev. 4 - 2 150 3 of 4 www.diodes.com October 2007 © Diodes Incorporated DMN5L06 Ordering Information (Note 5) Part Number DMN5L06-7 Notes: Case SOT-23 Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. K5L Date Code Key Year YM NEW PRODUCT Marking Information K5L = DMN5L06 Product Type Marking Code YM = Date Code Marking Y = Year ex: S = 2005 M = Month ex: 9 = September 2005 2006 2007 2008 2009 2010 2011 2012 S T U V W X Y Z Code Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Package Outline Dimensions A B C TOP VIEW G H K M J D E L SOT-23 Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 0° 8° α All Dimensions in mm Suggested Pad Layout Y Z G C X E Dimensions Value (in mm) Z 3.4 G 0.7 X 0.9 Y 1.4 C 2.0 E 0.9 IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DMN5L06 Document number: DS30614 Rev. 4 - 2 4 of 4 www.diodes.com October 2007 © Diodes Incorporated