DMN5L06DMKQ-7

DMN5L06DMKQ DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary RDS(ON) max ID max TA = +25°C 2.0Ω @ VGS = 5V 305mA 2.5Ω @ VGS = 2.5V 280mA 3.0Ω @ VGS = 1.8V 265mA           Description and Applications   This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.   Low On-Resistance Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected up to 2kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable Mechanical Data Case: SOT-26 Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3   General Purpose Interfacing Switch Power Management Functions  Weight: 0.015 grams (Approximate) SOT-26 ESD protected up 2kV D2 G1 S1 S2 G2 D1 TOP VIEW Internal Schematic BOTTOM VIEW TOP VIEW Ordering Information (Note 5) Part Number DMN5L06DMKQ-7 Notes: Case SOT-26 Packaging 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain