DMN5L06K-7

DMN5L06K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS Features and Benefits RDS(ON) ID TA = +25°C 2.0Ω @ VGS = 5.0V 300mA 2.5Ω @ VGS = 2.5V 200mA • • • • • • • • 50V Low On-Resistance Very Low Gate Threshold Voltage (1.0V max) Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 2kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Description and Applications Mechanical Data This new generation 50V N-channel enhancement mode MOSFET is designed to minimize RDS(on) yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch. • • • • Load Switches Level Switches Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish—Matte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.008 grams (Approximate) • • • • D SOT23 D G Gate Protection Diode Top View ESD PROTECTED TO 2kV S G S Top View Equivalent Circuit Ordering Information (Note 4) Part Number DMN5L06K-7 Notes: Qualification Commercial Case SOT23 Packaging 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain