DMN5L06K
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
Features and Benefits
RDS(ON)
ID
TA = +25°C
2.0Ω @ VGS = 5.0V
300mA
2.5Ω @ VGS = 2.5V
200mA
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50V
Low On-Resistance
Very Low Gate Threshold Voltage (1.0V max)
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Up To 2kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description and Applications
Mechanical Data
This new generation 50V N-channel enhancement mode MOSFET is
designed to minimize RDS(on) yet maintain superior switching
performance. This device is ideal for use in notebook battery power
management and load switch.
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Load Switches
Level Switches
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish—Matte Tin Annealed over Alloy 42 Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.008 grams (Approximate)
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D
SOT23
D
G
Gate Protection
Diode
Top View
ESD PROTECTED TO 2kV
S
G
S
Top View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN5L06K-7
Notes:
Qualification
Commercial
Case
SOT23
Packaging
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain
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