DMN5L06TK-7

DMN5L06TK-7

  • 厂商:

    BCDSEMI(美台)

  • 封装:

    SOT-523-3

  • 描述:

    N沟道

  • 详情介绍
  • 数据手册
  • 价格&库存
DMN5L06TK-7 数据手册
  Green DMN5L06TK N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • • Low On-Resistance Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead-Free Finish; RoHS Compliant (Notes 1 & 2) ESD Protected Up To 2kV Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 standards for High Reliability Case: SOT523 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish – Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 e3 Terminal Connections: See Diagram Weight: 0.002 grams (approximate) • • • • Drain SOT523 D Gate Gate Protection Diode ESD PROTECTED, 2kV TOP VIEW S G Source Equivalent Circuit Top View Ordering Information (Note 4) Part Number DMN5L06TK-7 Notes: Case SOT523 Packaging 3000/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain
DMN5L06TK-7
物料型号:DMN5L06TK

器件简介:该器件是N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR,即N沟道增强型场效应晶体管。

引脚分配:文档中的Top View图示显示了Drain(漏极)、Gate(栅极)和Source(源极)的引脚分配

参数特性: - 漏源电压最大值:Voss = 50V - 栅源电压最大值:VGss = +20V - 漏源电流连续值:280mA

功能详解:该器件具有低导通电阻、低阈值电压、低输入电容、快速开关速度、低输入/输出漏电、无铅表面处理且符合RoHS指令等特点。

应用信息:该器件符合AEC-Q101标准,适用于高可靠性应用,并且是静电放电保护的,耐受高达2kV的ESD。

封装信息:采用SOT523封装,材料为模塑塑料,具有“绿色”模具化合物,符合UL的可燃性分类等级94V-0。

订购信息:DMN5L06TK-7,SOT523封装,3000/卷带包装。

注意事项:文档中提供了有关RoHS合规性、卤素和锑的“绿色”设备定义、以及包装细节的更多信息链接。
DMN5L06TK-7 价格&库存

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