DMN61D9UDW-7

DMN61D9UDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features V(BR)DSS RDS(ON) max ID max TA = +25°C 60V 2Ω @ VGS = 5.0V 2.5Ω @ VGS = 2.5V 350mA Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.            Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package ESD Protected Up To 2kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Applications     Motor Control Power Management Functions Case: SOT363 Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.006 grams (Approximate)     D2 D1 SOT363 D2 G1 S1 S2 G2 D1 G2 G1 ESD Protected up to 2kV Gate Protection Diode Ordering Information S2 Q2 N-Channel Top View Pin out Equivalent Circuit (Note 4) Part Number DMN61D9UDW-7 DMN61D9UDW-13 Notes: Gate Protection Diode S1 Q1 N-Channel Top View Case SOT363 SOT363 Packaging 3000/Tape & Reel 10000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain