DMN61D9UWQ-13

DMN61D9UWQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits BVDSS RDS(ON) max 60V 2Ω @ VGS = 5.0V 2.5Ω @ VGS = 2.5V ID max TA = +25°C 340mA 300mA Description and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications:     Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected Up To 2kV   Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  PPAP Capable (Note 4) Mechanical Data Motor Control Power Management Functions Backlighting  Case: SOT323  Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish  Matte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208  Weight: 0.006 grams (Approximate) D SOT323 D G Gate Protection Diode ESD protected up to 2kV Top View S G S Top View Equivalent Circuit Ordering Information (Note 4) Part Number DMN61D9UWQ-7 DMN61D9UWQ-13 Notes: Case SOT323 SOT323 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain