DMN62D0LFB-7

NOT RECOMMENDED FOR NEW DESIGN USE DMN62D1LFB DMN62D0LFB N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT ADVANCE INFORMATION BVDSS Features and Benefits ID Max TA = +25°C RDS(ON) Max 2Ω @ VGS = 4V 320mA 2.5Ω @ VGS = 2.5V 50mA 60V  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance,  Case: X1-DFN1006-3  Case Material: Molded Plastic, "Green" Molding Compound; making it ideal for high-efficiency power management applications.  DC-DC Converters  Power Management Functions  Battery Operated Systems and Solid-State Relays  Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish  NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4  Weight: 0.001 grams (Approximate) Drain X1-DFN1006-3 S Gate D G ESD PROTECTED Bottom View Top View Pin-Out Gate Protection Diode Source Equivalent Circuit Ordering Information (Note 4) Product DMN62D0LFB-7 DMN62D0LFB-7B Notes: Marking NK NK Reel Size (inches) 7 7 Tape Width (mm) 8 8 Quantity per Reel 3,000 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain