DMN62D0LFB
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
RDS(ON) Max
ID Max
TA = +25°C
2Ω @ VGS = 4V
320mA
2.5Ω @ VGS = 2.5V
50mA
BVDSS
NEW PRODUCT
ADVANCE INFORMATION
Features and Benefits
60V
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control
(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and
manufactured in IATF 16949 certified facilities), please
contact us or your local Diodes representative.
https://www.diodes.com/quality/product-definitions/
Description and Applications
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.
Mechanical Data
DC-DC Converters
Power Management Functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
Case: X1-DFN1006-3
Case Material: Molded Plastic, "Green" Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e4
Weight: 0.001 grams (Approximate)
D
X1-DFN1006-3
S
G
D
G
ESD PROTECTED
Gate Protection
Diode
Bottom View
Top View
Pin-Out
S
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN62D0LFB-7
DMN62D0LFB-7B
Notes:
Case
X1-DFN1006-3
X1-DFN1006-3
Packaging
3,000 /Tape & Reel
10,000 /Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain
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