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DMN62D0UT-13

DMN62D0UT-13

  • 厂商:

    BCDSEMI(美台)

  • 封装:

    TSSOP6,SC88,SOT363

  • 描述:

    MOSFET 2N-CH 60V 0.35A SOT523

  • 详情介绍
  • 数据手册
  • 价格&库存
DMN62D0UT-13 数据手册
DMN62D0UT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS Features 2Ω @ VGS = 4.5V 60V          ID max TA = +25°C RDS(ON) max 2.5Ω @ VGS = 2.5V 320mA Description Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 1kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications Mechanical Data     Motor Control Power Management Functions Case: SOT523 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish  Matte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.002 grams (Approximate)     SOT523 D D G G Gate Protection Diode Top View S S Top View Pin Out Configuration Equivalent Circuit Ordering Information (Note 4) Part Number DMN62D0UT-7 DMN62D0UT-13 Notes: Case SOT523 SOT523 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain
DMN62D0UT-13
物料型号:DMN62D0UT

器件简介:这是一个N沟道增强型MOSFET,设计用于降低导通电阻(RDS(ON))同时保持优越的开关性能,适合高效率的电源管理应用。

引脚分配:SOT523封装,引脚从G(栅极)、E(发射极)、S(源极)。

参数特性: - 漏源电压(BVpss):60V - 最大导通电阻(RDS(ON) max):在Vas=4.5V时为2Q,而在Vas=2.5V时为2.5mOhm - 最大输入电容(Ciss):32pF - 阈值电压(VGS(TH)):0.5V至1.0V - 静态漏源导通电阻(RDS(ON)):在VGs=4.5V, Id=0.1A时为1.2mOhm至2.0mOhm

功能详解: - 低栅极阈值电压 - 低输入电容 - 快速开关速度 - 低输入/输出漏电流 - 1kV ESD保护 - 完全无铅且符合RoHS标准 - 无卤素和锑的"绿色"器件

应用信息:适用于电机控制和电源管理功能。

封装信息:SOT523封装,材料为模塑塑料,"绿色"成型化合物,UL阻燃等级94V-0。
DMN62D0UT-13 价格&库存

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DMN62D0UT-13
    •  国内价格
    • 1+0.38980
    • 500+0.25980
    • 5000+0.22510

    库存:9090

    DMN62D0UT-13
      •  国内价格
      • 5+0.30867
      • 50+0.30068
      • 150+0.29528

      库存:43