DMN62D0UWQ
N-CHANNEL ENHANCEMENT MODE MOSFET
NEW PRODUCT
Product Summary
Features and Benefits
BVDSS
RDS(ON) Max
60V
2Ω @ VGS = 4.5V
2.5Ω @ VGS = 2.5V
ID Max
TA = +25°C
340mA
300mA
Description
This MOSFET is designed to meet the stringent requirements of
Automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
100% Rg Test in Production
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Motor Control
Power Management Functions
Backlighting
Case: SOT323
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Annealed over Alloy 42
Leadframe. Solderable per MIL-STD-202, Method 208 e3
Weight: 0.006 grams (Approximate)
D
SOT323
D
G
Gate Protection
Diode
ESD Protected Gate
Top View
S
G
S
Equivalent Circuit
Top View
Ordering Information (Note 5)
Part Number
DMN62D0UWQ-7
DMN62D0UWQ-13
Notes:
Case
SOT323
SOT323
Packaging
3000/Tape & Reel
10000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain
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