DMN62D1LFB-7B

DMN62D1LFB N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary ID TA = +25°C RDS(ON) 2Ω @ VGS = 4V 407mA 2.5Ω @ VGS = 2.5V 364mA 60V This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected   Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3)  Case: X1-DFN1006-3  Case Material: Molded Plastic, "Green" Molding Compound; UL Flammability Classification Rating 94V-0 which makes it ideal for high-efficiency power management applications.   Mechanical Data Description and Applications  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: FinishNiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4 DC-DC Converters   Power Management Functions  Battery Operated Systems and Solid-State Relays Weight: 0.001 grams (Approximate) D G X1-DFN1006-3 G D S Gate Protection Diode ESD PROTECTED Top View Pin-Out Bottom View S Equivalent Circuit Ordering Information (Note 4) Part Number DMN62D1LFB-7B Notes: Marking NQ Reel Size (inches) 7 Tape Width (mm) 8 Quantity Per Reel 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain