DMN63D8LDWQ-7

DMN63D8LDWQ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features V(BR)DSS RDS(ON) 30V 4.2Ω @ VGS = 4.5V 2.8Ω @ VGS = 10V • • • • • • • • • • ID TA = 25°C 200mA 260mA Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • • Dual N-Channel MOSFET Low On-Resistance Low Input Capacitance Fast Switching Speed Small Surface Mount Package ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Mechanical Data • • Applications DC-DC Converters Power Management Functions Battery Operated Systems and Solid-State Relays Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. • • • • Case: SOT363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.006 grams (approximate) D2 G1 S1 S2 G2 D1 SOT363 ESD PROTECTED Top View Top View Internal Schematic Ordering Information (Note 5) Part Number DMN63D8LDWQ-7 DMN63D8LDWQ-13 Notes: Case SOT363 SOT363 Packaging 3000/Tape & Reel 10000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain