DMN63D8LV
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
NEW PRODUCT
Product Summary
Features
V(BR)DSS
RDS(ON)
30V
4.2Ω @ VGS = 5V
2.8Ω @ VGS = 10V
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ID
TA = 25°C
200mA
260mA
Description
This new generation MOSFET has been designed to minimize the
on-state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
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Applications
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Dual N-Channel MOSFET
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
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DC-DC Converters
Power management functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc
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Case: SOT563
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.006 grams (approximate)
SOT563
Top View
ESD PROTECTED
D2
G1
S1
S2
G2
D1
Top View
Internal Schematic
Ordering Information (Note 4)
Part Number
DMN63D8LV-7
DMN63D8LV-13
Notes:
Case
SOT563
SOT563
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain
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