DMN65D8LFB-7B

DMN65D8LFB N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary V(BR)DSS Features and Benefits RDS(ON) ID TA = +25°C 3.0Ω @ VGS = 10V 400mA 4.0Ω @ VGS = 5V 330mA           60V N-Channel MOSFET Low On-Resistance Low Gate-Threshold Voltage Low-Input Capacitance Fast Switching Speed Small-Surface Mount Package ESD Protected Gate, 1.2kV HBM Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power-management applications.      DC-DC Converters Power Management Functions Battery Operated Systems and Solid-State Relays Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.     Case: X1-DFN1006-3 Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish—NiPdAu over Copper Leadframe; Solderable per MIL-STD-202, Method 208 e4 Weight: 0.001 grams (Approximate) Drain X1-DFN1006-3 Body Diode Gate Gate Protection Diode ESD PROTECTED TO 1.2kV Bottom View D Source Equivalent Circuit S G Top View Pin Configuration Ordering Information (Note 4) Part Number DMN65D8LFB-7 DMN65D8LFB-7B Notes: Case X1-DFN1006-3 X1-DFN1006-3 Packaging 3000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain