DMN66D0LW-7

DMN66D0LW N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Mechanical Data  Low On-Resistance   Low Gate Threshold Voltage   Low Input Capacitance  Fast Switching Speed  Moisture Sensitivity: Level 1 per J-STD-020D  Small Surface Mount Package  Terminals: Solderable per MIL-STD-202, Method 208 e3  ESD Protected Gate, 1KV (HBM)   Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Terminal Connections: See Diagram  Qualified to AEC-Q101 Standards for High Reliability  Weight: 0.006 grams (approximate) Case: SOT323 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). SOT323 Drain D Gate ESD PROTECTED, 1KV Gate Protection Diode TOP VIEW S G Source TOP VIEW EQUIVALENT CIRCUIT Ordering Information (Note 4) Part Number DMN66D0LW-7 Notes: Case SOT323 Packaging 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain