DMP1008UCB9-7

DMP1008UCB9 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features VDSS RDS(ON) Max ID Max TA = +25°C -8V 5.7mΩ@VGS = -4.5V -13.2A Description This 3rd generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer. It uses Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(ON) per footprint area.           LD-MOS Technology with the Lowest Figure of Merit: RDS(ON) = 5.7mΩ to Minimize On-State Losses Qg = 8.2nC for Ultra-Fast Switching VGS(TH) = -0.6V Typ. for a Low Turn-On Potential CSP with Footprint 1.5mm  1.5mm Height = 0.60mm for Low Profile ESD Protection of Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Applications Mechanical Data       DC-DC Converters Battery Management Load Switch    Case: U-WLB1515-9 Moisture Sensitivity: Level 1 per J-STD-020 Terminal: Finish - SnAgCu. Solderable per MIL-STD-202 Method 208 UBM Size: 245µm Terminal Connections: See Diagram Below Weight: 0.0018 grams (Approximate) U-WLB1515-9 (Type F) Top-View Pin Configuration Equivalent Circuit Ordering Information (Note 4) Part Number DMP1008UCB9-7 Notes: Case U-WLB1515-9 (Type F) Packaging 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain