DMP1012UCB9-7

NOT RECOMMENDED FOR NEW DESIGN USE DMP1007UCB9 DMP1012UCB9 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ. @ VGS = -4.5V, TA Features = +25°C) NEW PRODUCT INFORMATION ADVANCED ADVANCE INFORMATION  VDSS RDS(ON) Qg Qgd ID -8V 8.2mΩ 8.1nC 1.8nC -10A Description This 3rd generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer. It uses Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(ON) per footprint area.  LD-MOS Technology with the Lowest Figure of Merit: RDS(ON) = 8.2mΩ to Minimize On-State Losses Qg = 8.1nC for Ultra-Fast Switching Vgs(th) = -0.8V Typ. for a Low Turn-On Potential       CSP with Footprint 1.5mm × 1.5mm Height = 0.62mm for Low Profile ESD = 6kV HBM Protection of Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Applications Mechanical Data  DC-DC Converters  Case: U-WLB1515-9  Battery Management  Terminal Connections: See Diagram Below  Load Switch U-WLB1515-9 G S S S S S D D D Top-View Pin Configuration Equivalent Circuit Ordering Information (Note 4) Part Number DMP1012UCB9-7 Notes: Case U-WLB1515-9 Packaging 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain