DMP1100UCB4-7

DMP1100UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary (Typ @VGS = -4.5V, TA = +25°C) Features and Benefits BVDSS RDS(ON) Qg Qgd ID  Built-in G-S Protection Diode against ESD 2kV HBM -12V 65mΩ 9nC 2.4nC -3.2A  Ultra Small 0.8mm x 0.8mm Package  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This new generation MOSFET is designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a high-performance MOSFET in ultra-small 0.8mm x 0.8mm package.  Case: X2-WLB0808-4  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Connections: See Diagram  UBM Opening: 203µm    Portable Applications Load Switch Power Management Functions ESD PROTECTED Top View Ordering Information (Note 4) Part Number DMP1100UCB4-7 Notes: Case X2-WLB0808-4 Packaging 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain