DMP1200UFR4-7

DMP1200UFR4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS Features and Benefits ID TA = +25°C RDS(ON) 100mΩ @ VGS = -4.5 V -2A 160mΩ @ VGS = -2.5V -1A 200mΩ @ VGS = -1.8V -0.5A 380mΩ @ VGS = -1.5V -0.2A NEW PRODUCT -12V  Low On-Resistance  ESD Protected Gate  Low Input/Output Leakage  Fast Switching Speed   Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data Description and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching  Case: X2-DFN1010-3  performance, making it ideal for high efficiency power management applications. Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Power Management Functions  Terminal Connections: See Diagram  Backlighting   Load Switch Terminals: Finish - NiPdAu Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208  Weight: 0.0015 grams (Approximate) X2-DFN1010-3 ESD PROTECTED Bottom View Pin-out Top view Equivalent Circuit Ordering Information (Note 4) Notes: Part Number Case Packaging DMP1200UFR4-7 X2-DFN1010-3 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain