DMP2069UFY4
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
RDS(ON) max
ID max
TA = 25°C
54mΩ @ VGS = -4.5V
-2.5A
90mΩ @ VGS = -1.8V
-1.8A
V(BR)DSS
NEW PRODUCT
Features and Benefits
•
•
•
•
•
•
•
•
-20V
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Up To 3kV
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device, Halogen and Antimony Free (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
Mechanical Data
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
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•
•
•
•
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Case: X2-DFN2015-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Weight: 0.008 grams (approximate)
•
•
Backlighting
Power Management Functions
DC-DC Converters
•
•
X2-DFN2015-3
S
D
G
ESD PROTECTED TO 3kV
Top View
Bottom View
Internal Schematic
Ordering Information (Note 3)
Part Number
DMP2069UFY4-7
Notes:
Case
X2-DFN2015-3
Packaging
3000/Tape & Reel
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
29P = Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)
29P
YM
Date Code Key
Year
Code
Month
Code
2009
W
Jan
1
2010
X
Feb
2
DMP2069UFY4
Document number: DS31949 Rev. 5 - 2
Mar
3
2011
Y
Apr
4
May
5
2012
Z
Jun
6
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2013
A
Jul
7
Aug
8
2014
B
Sep
9
Oct
O
2015
C
Nov
N
Dec
D
January 2012
© Diodes Incorporated
DMP2069UFY4
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
NEW PRODUCT
Continuous Drain Current (Note 4)
Steady
State
Units
V
V
IDM
Value
-20
±8
-2.5
-2.2
-12
Symbol
PD
RθJA
TJ, TSTG
Value
0.53
231
-55 to +150
Unit
W
°C/W
°C
TA = 25°C
TA = 70°C
ID
Pulsed Drain Current (Note 5)
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient @TA = 25°C
Operating and Storage Temperature Range
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
TJ = 25°C
Static Drain-Source On-Resistance
Forward Transfer Admittance
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistnace
SWITCHING CHARACTERISTICS (Note 7)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
-20
⎯
⎯
⎯
⎯
⎯
⎯
-1.0
±10
V
μA
μA
VGS = 0V, ID = -250μA
VDS = -20V, VGS = 0V
VGS = ±8V, VDS = 0V
VGS(th)
-0.3
⎯
mΩ
|Yfs|
⎯
-1.0
54
69
90
⎯
V
RDS (ON)
-0.55
36
46
60
8
VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -2.5A
VGS = -2.5V, ID = -2.2A
VGS = -1.8V, ID = -2.0A
VDS = -5V, ID = -2.5A
Ciss
Coss
Crss
Rg
⎯
⎯
⎯
⎯
214
104
25
250
⎯
⎯
⎯
⎯
pF
pF
pF
Ω
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
⎯
⎯
⎯
⎯
⎯
⎯
⎯
9.1
1.5
1.7
80.4
155.1
688.1
423.8
⎯
⎯
⎯
160
210
1376
848
nC
nC
nC
ns
ns
ns
ns
S
Test Condition
VDS = -10V, VGS = 0V
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
VGS = -4.5V, VDS = -10V, ID = -4A
VDS = -10V, VGS = -4.5V,
RD = 2.5Ω, RG = 3.0Ω
4. Device mounted on FR-4 PCB with minimum recommended pad layout.
5. Repetitive rating, pulse width limited by junction temperature.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
DMP2069UFY4
Document number: DS31949 Rev. 5 - 2
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January 2012
© Diodes Incorporated
DMP2069UFY4
20
20
VGS = 2.5V
15
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VDS = 5V
VGS = 2.0V
10
VGS = 1.8V
5
VGS = 1.5V
15
10
5
TA = 150°C
TA = 125°C
0
1
2
3
4
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
0.16
0.14
0.12
VGS = 1.5V
0.10
0.08
VGS = 1.8V
0.06
VGS = 2.5V
0.04
VGS = 4.5V
0.02
0
0
5
10
15
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
20
RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω)
1.7
1.5
1.3
1.1
0.9
VGS = 4.5V
ID = 10A
VGS = 2.5V
ID = 5A
0.7
0.5
-50
0
5
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Document number: DS31949 Rev. 5 - 2
0
0.5
1
1.5
2
2.5
3
3.5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
4
0.08
VGS = 4.5V
0.06
T A = 150°C
T A = 125°C
TA = 85°C
0.04
T A = 25°C
T A = -55°C
0.02
0
0
5
10
15
ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
20
0.10
0.08
VGS = 2.5V
ID = 5A
0.06
0.04
VGS = 4.5V
ID = 10A
0.02
0
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
Fig. 5 On-Resistance Variation with Temperature
DMP2069UFY4
TA = 85°C
T A = 25°C
TA = -55°C
VGS = 1.2V
RDSON, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
NEW PRODUCT
VGS = 4.5V
VGS = 3.5V
VGS = 3.0V
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DMP2069UFY4
18
0.8
16
IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
20
ID = 1mA
0.6
ID = 250µA
0.4
0.2
14
12
10
TA = 25°C
8
6
4
2
0
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0
0.2
10,000
0.4
0.6
0.8
1.0
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.4
100,000
IDSS, LEAKAGE CURRENT (nA)
f = 1MHz
C, CAPACITANCE (pF)
1,000
Ciss
100
Coss
10,000
T A = 150°C
TA = 125°C
1,000
T A = 85°C
100
10
Crss
10
0
T A = 25°C
5
10
15
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Capacitance
1
20
0
5
10
15
20
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage
1
r(t), TRANSIENT THERMAL RESISTANCE
NEW PRODUCT
1.0
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
RθJA(t) = r(t) * RθJA
RθJA = 235°C/W
D = 0.02
0.01
D = 0.01
P(pk)
D = 0.005
t2
T J - T A = P * R θJA(t)
Duty Cycle, D = t1/t2
D = Single Pulse
0.001
0.00001
0.0001
DMP2069UFY4
Document number: DS31949 Rev. 5 - 2
t1
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (s)
Fig. 11 Transient Thermal Response
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10
100
1,000
January 2012
© Diodes Incorporated
DMP2069UFY4
Package Outline Dimensions
NEW PRODUCT
A3
A
X2-DFN2015-3
Dim Min Max Typ
A
0.40
−
−
A1
0
0.05 0.02
A3
0.13
−
−
b
0.20 0.30 0.25
d
0.30
−
−
D
1.45 1.575 1.50
D2 1.00 1.20 1.10
e
0.50
−
−
E
1.95 2.075 2.00
E2 0.70 0.90 0.80
f
0.60
−
−
L
0.25 0.35 0.30
z
−
− 0.125
All Dimensions in mm
SEATING PLANE
A1
z
D
L
d
e
E2
E
D2
f
b
Suggested Pad Layout
X
Y2
X1
Y1
G
X
Y
Dimensions
C
G
X
X1
Y
Y1
Y2
Value (in mm)
1.00
0.15
0.31
1.30
0.50
1.00
0.65
C
DMP2069UFY4
Document number: DS31949 Rev. 5 - 2
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January 2012
© Diodes Incorporated
DMP2069UFY4
NEW PRODUCT
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
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DMP2069UFY4
Document number: DS31949 Rev. 5 - 2
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© Diodes Incorporated
