DMP210DUFB4-7B

DMP210DUFB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(ON) -20V 5Ω @ VGS = -4.5V 7Ω @ VGS = -2.5V 10Ω @ VGS = -1.8V 15Ω @ VGS = -1.5V Features and Benefits ID TA = +25°C -200mA -170mA -140mA -50mA Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.    P-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage VGS(TH)       Low Input Capacitance Fast Switching Speed Ultra-Small Surfaced Mount Package Ultra-Low Package Profile, 0.4mm Maximum Package Height ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability   Applications Mechanical Data     DC-DC Converters Power Management Functions Case: X2-DFN1006-3 Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.001 grams (Approximate)     X2-DFN1006-3 D G S D G ESD protected Bottom View Top View Internal Schematic Gate Protection Diode S Equivalent Circuit Ordering Information (Note 4) Part Number DMP210DUFB4-7 DMP210DUFB4-7B Notes: Case X2-DFN1006-3 X2-DFN1006-3 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain