NOT RECOMMENDED FOR NEW DESIGN
USE DMP21D6UFD
DMP21D5UFD
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
Features
-600mA
ADVANCE INFORMATION
1.0 @ VGS = -4.5V
1.5 @ VGS = -2.5V
-20V
2.0 @ VGS = -1.8V
ID
TA = +25°C
Package
RDS(ON) MAX
-500mA
X1-DFN1212-3
-400mA
-250mA
3.0 @ VGS = -1.5V
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Mechanical Data
Applications
DC-DC Converters
Power Management Functions
Low On-Resistance
Very Low Gate Threshold Voltage VGS(TH), 1.0V Max
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Case: X1-DFN1212-3
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: NiPdAu over Copper Leadframe. Solderable per MILSTD-202, Method 208 e4
Terminal Connections: See Diagram
Weight: 0.005 grams (Approximate)
Drain
Gate
Gate
Protection
Diode
Top View
ESD PROTECTED
Bottom View
Source
Equivalent Circuit
Pin-Out Top View
Ordering Information (Note 4)
Part Number
DMP21D5UFD-7
Notes:
Case
X1-DFN1212-3
Packaging
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain
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