DMP4050SSS-13

DMP4050SSS-13

  • 厂商:

    BCDSEMI(美台)

  • 封装:

    SOICN-8_4.9X3.9MM

  • 描述:

  • 数据手册
  • 价格&库存
DMP4050SSS-13 数据手册
A Product Line of Diodes Incorporated DMP4050SSS ADVANCE INFORMATION 40V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS Features and Benefits • ID RDS(on) TA = 25°C 50mΩ @ VGS= -10V -6.0A 79mΩ @ VGS= -4.5V -4.7A -40V Low on-resistance • Fast switching speed • “Green” component and RoHS compliant (Note 1) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description and Applications • Case: SO-8 This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 (Note 1) • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals Connections: See diagram below • Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 • Weight: 0.074 grams (approximate) • Motor control • Backlighting • DC-DC Converters • Power management functions D SO-8 G S Top View Ordering Information Product DMP4050SSS-13 Note: Top View Equivalent Circuit (Note 1) Marking P4050SS Reel size (inches) 13 Tape width (mm) 12 Quantity per reel 2,500 1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website. Marking Information P4050SS YY WW DMP4050SSS Document Number DS32108 Rev 1 - 2 = Manufacturer’s Marking P4050SS = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01-53) 1 of 8 www.diodes.com March 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION DMP4050SSS Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source voltage Gate-Source voltage Continuous Drain current VGS = 10V Pulsed Drain current VGS= 10V Continuous Source current (Body diode) Pulsed Source current (Body diode) (Note 2) (Note 4) TA = 70°C (Note 4) (Note 3) (Note 5) (Note 4) (Note 5) Symbol VDSS VGS ID IDM IS ISM Value -40 ±20 -6.0 -4.8 -4.4 -27.0 -4.0 -27.0 Unit V V Value 1.56 12.5 2.8 22.5 80 44.5 35 -55 to 150 Unit A A A A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Power dissipation Linear derating factor Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and storage temperature range Notes: Symbol (Note 3) PD (Note 4) (Note 3) (Note 4) (Note 6) RθJA RθJL TJ, TSTG W mW/°C °C/W °C 2. AEC-Q101 VGS maximum is ±16V. 3. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 4. Same as note (3), except the device is measured at t ≤ 10 sec. 5. Same as note (3), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature. 6. Thermal resistance from junction to solder-point (at the end of the drain lead). DMP4050SSS Document Number DS32108 Rev 1 - 2 2 of 8 www.diodes.com March 2010 © Diodes Incorporated A Product Line of Diodes Incorporated Thermal Characteristics 1.6 Max Power Dissipation (W) -ID Drain Current (A) RDS(on) Limited 10 1 DC 1s 100m 100ms 10m 10ms Single Pulse T amb=25°C 1m 100m 1ms 100µs 1 10 -VDS Drain-Source Voltage (V) 1.4 25mm x 25mm 1oz FR4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 20 70 T amb=25°C 60 50 D=0.5 40 30 20 Single Pulse D=0.2 D=0.05 10 0 100µ D=0.1 1m 10m 100m 1 10 100 120 140 160 100 1k Single Pulse T amb=25°C 10 1 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance Document Number DS32108 Rev 1 - 2 80 100 Pulse Width (s) DMP4050SSS 60 Derating Curve Maximum Power (W) 80 40 Temperature (°C) Safe Operating Area Thermal Resistance (°C/W) ADVANCE INFORMATION DMP4050SSS Pulse Power Dissipation 3 of 8 www.diodes.com March 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION DMP4050SSS Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -40 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -0.5 ±100 V μA nA ID = -250μA, VGS= 0V VDS= -40V, VGS= 0V VGS= ±20V, VDS= 0V VGS(th) -1.0 RDS (ON) ⎯ gfs VSD trr Qrr ⎯ ⎯ S V ns nC ID= -250μA, VDS= VGS VGS= -10V, ID= -6A VGS= -4.5V, ID= -5A VDS= -15V, ID= -6A IS= -6A, VGS= 0V ⎯ -3.0 0.050 0.079 ⎯ -1.2 ⎯ ⎯ V Static Drain-Source On-Resistance (Note 7) ⎯ 0.038 0.055 14 -0.86 18.5 15.6 Ciss Coss Crss Qg Qg Qgs Qgd tD(on) tr tD(off) tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 674 115 67.7 6.9 13.9 2 3.4 1.9 3.1 31.5 12.6 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ pF pF pF nC nC nC nC ns ns ns ns Forward Transconductance (Notes 7 & 8) Diode Forward Voltage (Note 7) Reverse recovery time (Note 8) Reverse recovery charge (Note 8) DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge (Note 9) Total Gate Charge (Note 9) Gate-Source Charge (Note 9) Gate-Drain Charge (Note 9) Turn-On Delay Time (Note 9) Turn-On Rise Time (Note 9) Turn-Off Delay Time (Note 9) Turn-Off Fall Time (Note 9) Notes: Ω Test Condition IS= -2.5, di/dt= 100A/μs VDS= -20V, VGS= 0V f= 1MHz VGS= -4.5V VGS= -10V VDS= -20V ID= -6A VDD= -20V, VGS= -10V ID= -1A, RG ≅ 6.0Ω 7. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2% 8. For design aid only, not subject to production testing. 9. Switching characteristics are independent of operating junction temperatures. DMP4050SSS Document Number DS32108 Rev 1 - 2 4 of 8 www.diodes.com March 2010 © Diodes Incorporated A Product Line of Diodes Incorporated Typical Characteristics 4V -ID Drain Current (A) 10 3V 1 2.5V 0.1 -VGS 0.01 4V 3.5V 10 3V 2.5V 1 2V 0.1 -VGS 0.01 0.1 10 1 10 0.1 10 -VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics -VDS = 10V 1 T = 150°C T = 25°C 0.1 1.5 2.0 2.5 3.0 3.5 1.6 1 3.5V 4V 4.5V 10V 0.1 1 10 -ISD Reverse Drain Current (A) 3V 0.1 1.2 1.0 VGS(th) 0.8 DMP4050SSS Document Number DS32108 Rev 1 - 2 VGS = VDS ID = -250uA 0.6 -50 0 50 100 150 10 1 T = 150°C T = 25°C 0.1 0.01 1E-3 0.2 0.4 0.6 0.8 1.0 1.2 -VSD Source-Drain Voltage (V) -ID Drain Current (A) On-Resistance v Drain Current RDS(on) Normalised Curves v Temperature T = 25°C 2.5V ID = -12A Tj Junction Temperature (°C) Typical Transfer Characteristics -VGS VGS = -10V 1.4 -VGS Gate-Source Voltage (V) 0.01 0.01 1 -VDS Drain-Source Voltage (V) Normalised RDS(on) and VGS(th) -ID Drain Current (A) 10V T = 150°C 3.5V -ID Drain Current (A) 10V T = 25°C RDS(on) Drain-Source On-Resistance (Ω) ADVANCE INFORMATION DMP4050SSS Source-Drain Diode Forward Voltage 5 of 8 www.diodes.com March 2010 © Diodes Incorporated A Product Line of Diodes Incorporated Typical Characteristics - continued 10 -VGS Gate-Source Voltage (V) 1000 VGS = 0V C Capacitance (pF) ADVANCE INFORMATION DMP4050SSS f = 1MHz 800 CISS 600 COSS CRSS 400 200 0 0.1 1 10 8 6 4 VDS = -20V 2 0 ID = -6A 0 2 4 6 8 10 12 14 Q - Charge (nC) -VDS - Drain - Source Voltage (V) Gate-Source Voltage v Gate Charge Capacitance v Drain-Source Voltage Test Circuits Current regulator QG 12V VG QGS 50k 0.2␮F Same as D.U.T QGD VDS IG D.U.T ID VGS Charge Gate charge test circuit Basic gate charge waveform VDS 90% RD VGS VDS RG VDD 10% VGS tr td(off) t(on) tr t(on) Switching time waveforms DMP4050SSS Document Number DS32108 Rev 1 - 2 Pulse width ⬍ 1␮S Duty factor 0.1% td(on) 6 of 8 www.diodes.com Switching time test circuit March 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION DMP4050SSS Package Outline Dimensions θ DIM Inches Millimeters DIM Inches Min. Millimeters Max. Max. Min. Max. A 0.053 0.069 1.35 1.75 e A1 0.004 0.010 0.10 0.25 b 0.013 0.020 0.33 0.51 D 0.189 0.197 4.80 5.00 c 0.008 0.010 0.19 0.25 H 0.228 0.244 5.80 6.20 θ 0° 8° 0° 8° E 0.150 0.157 3.80 4.00 h 0.010 0.020 0.25 0.50 L 0.016 0.050 0.40 1.27 - - - - - 0.050 BSC Min. Max. Min. 1.27 BSC Suggested Pad Layout 1.52 0.060 7.0 0.275 4.0 0.155 0.6 0.024 1.27 0.050 mm inches DMP4050SSS Document Number DS32108 Rev 1 - 2 7 of 8 www.diodes.com March 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION DMP4050SSS IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. B. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2010, Diodes Incorporated www.diodes.com DMP4050SSS Document Number DS32108 Rev 1 - 2 8 of 8 www.diodes.com March 2010 © Diodes Incorporated
DMP4050SSS-13 价格&库存

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DMP4050SSS-13

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    DMP4050SSS-13
    •  国内价格 香港价格
    • 1+14.307241+1.85682
    • 10+9.0146310+1.16994
    • 25+7.5969325+0.98595
    • 50+6.7103150+0.87088
    • 100+5.96430100+0.77406

    库存:33260