NOT RECOMMENDED FOR NEW DESIGN
NO ALTERNATE PRODUCT
DMS3017SSD
ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
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DIOFET Utilizes a Unique Patented Process to Monolithically
Integrate a MOSFET and a Schottky in a Single die to Deliver:
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Low RDS(on)—Minimizes Conduction Loss
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Low VSD—Reduces Losses due to Body Diode Construction
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Low Qrr—Lower Qrr of Integrated Schottky Reduces Body
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Diode Switching Losses
Low Gate Capacitance (Qg/Qgs) Ratio—Reduces Risk of
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
WTSSOP-16EP (Type DX) Eight: 0.072 grams (Approximate)
Shoot-Through or Cross Conduction Currents at High
Frequencies
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Avalanche Rugged—IAR and EAR Rated
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
D2
G2
D2
S2/D1
G1
S2/D1
S1
S2/D1
Top View
Top View
Internal Schematic
Q1
Q2
D1
D2
G1
G2
S1
S2
N-Channel MOSFET +
Integrated Schottky Diode
N-Channel MOSFET
Ordering Information (Note 3)
Part Number
DMS3017SSD-13
Notes:
Case
SO-8
Packaging
2500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free
3. Halogen- and Antimony-free "Green” products are defined as those which contain
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