DMT10H015LSS-13

DMT10H015LSS 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT INFORMATION ADVANCEINFORMATION ADVANCED BVDSS Features and Benefits ID TA = +25°C RDS(ON) Max 16mΩ @ VGS = 10V 8.3A 18mΩ @ VGS = 6V 7.9A 100V  100% Unclamped Inductive Switch (UIS) Test in Production  High Conversion Efficiency  Low RDS(ON) – Minimizes On-State Losses  Low Input Capacitance  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching  Case: SO-8  Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Connections Indicator: See Diagram  Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208  Weight: 0.074 grams (Approximate) performance. This device is ideal for use in notebook battery power management and loadswitch.    Backlighting Power Management Functions DC-DC Converters SO-8 S D S D S D G D D G Top View Internal Schematic Top View S Equivalent Circuit Ordering Information (Note 4) Part Number DMT10H015LSS-13 Notes: Case SO-8 Packaging 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain