DMT6009LJ3

DMT6009LJ3

  • 厂商:

    BCDSEMI(美台)

  • 封装:

    TO-251

  • 描述:

    DMT6009LJ3

  • 详情介绍
  • 数据手册
  • 价格&库存
DMT6009LJ3 数据手册
DMT6009LJ3 Green 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(ON) Max ID TC = +25°C  10mΩ @ VGS = 10V 74.5A 12.8mΩ @ VGS = 4.5V 65.8A   BVDSS 60V Features and Benefits     100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application Low RDS(ON)—Ensures On State Losses Are Minimized Excellent Qgd x RDS(ON) Product (FOM) Advanced Technology for DC-DC Converters Small Form Factor Thermally Efficient Package Enables Higher Density End Products Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Description and Applications Mechanical Data This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance,   making it ideal for high-efficiency power-management applications.    Power Management Functions DC-DC Converters Backlighting     Case: TO251 (Type TH) Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.33 grams (Approximate) TO251 (Type TH) Top View Bottom View G D S Internal Schematic Top View Pin Configuration Ordering Information (Note 4) Part Number DMT6009LJ3 Notes: Case TO251 (Type TH) Packaging 75 Pieces / Tube 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3).compliant. All applicable RoHS exemptions applied. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain
DMT6009LJ3
物料型号:DMT6009LJ3

器件简介:这是一款60V N-CHANNEL ENHANCEMENT MODE MOSFET,专为高效率电源管理应用设计,以最小化导通电阻(RDS(ON))同时保持优越的开关性能。

引脚分配:文档中提供了TO251 (Type TH)封装的顶视图和底视图,但具体的引脚分配需要查看图表部分。

参数特性: - 漏源电压(BVDss):60V - 最大导通电阻(RDS(ON) Max):10mΩ @ VGs=10V,12.8mΩ @ VGs=4.5V - 连续漏电流(ID):74.5A @ Tc=+25°C - 脉冲漏电流(IOM):280A (10μs脉冲,占空比=1%) - 雪崩电流(IAS):28.2A - 雪崩能量(EAS):39.8mJ

功能详解: - 100%无钳位感性开关,确保更可靠和稳健的最终应用。 - 低RDS(ON),确保导通状态下的损耗最小化。 - 优秀的Qgd x RDS(ON)产品(FOM)适用于DC-DC转换器。 - 小型化热效率高的封装,实现更高密度的最终产品。 - 无铅表面处理,符合RoHS标准。

应用信息: - 电源管理功能 - DC-DC转换器 - 背光

封装信息: - 封装类型:TO251 (Type TH) - 封装材料:模塑塑料,“绿色”模塑料化合物。 - UL阻燃等级:94V-0 - 湿度敏感性等级:J-STD-020标准下的1级
DMT6009LJ3 价格&库存

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