0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
DMT6010LSS-13

DMT6010LSS-13

  • 厂商:

    BCDSEMI(美台)

  • 封装:

    SOT96-1

  • 描述:

    MOSFETBVDSS:41V60VSO-8T&R;2

  • 详情介绍
  • 数据手册
  • 价格&库存
DMT6010LSS-13 数据手册
DMT6010LSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT INFORMATION ADVANCEINFORMATION ADVANCED BVDSS Features and Benefits RDS(ON) max ID max TA = 25°C 8mΩ @ VGS = 10V 14.0A 12mΩ @ VGS = 4.5V 11.5A 60V    100% Unclamped Inductive Switch (UIS) Test in Production High Conversion Efficiency Low RDS(ON) – Minimizes On-State Losses      Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching  Case: SO-8  Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (Approximate) performance. This device is ideal for use in notebook battery power management and loadswitch.  Backlighting  Power Management Functions  DC-DC Converters  SO-8 S D S D S D G D D G S Top View Internal Schematic Top View Equivalent Circuit Ordering Information (Note 4) Part Number DMT6010LSS-13 Notes: Case SO-8 Packaging 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain
DMT6010LSS-13
物料型号为 DMT6010LSS。

这是一个60V N-CHANNEL ENHANCEMENT MODE MOSFET,具有以下特点和应用:

- 100% UIS测试生产 - 高转换效率 - 低RDS(ON) - 最小化导通状态下的损耗 - 低输入电容 - 快速开关速度 - 完全无铅且符合RoHS标准 - 无卤素和锑的“绿色”设备 - 符合AEC-Q101标准的高可靠性

引脚分配封装信息如下: - 封装类型:SO-8 - 引脚从顶部视图的左侧开始依次为:G(栅极)、S(源极)、D(漏极),重复此序列。


参数特性包括: - 漏极-源极电压(Voss):60V - 栅极-源极电压(Vass):20V - 连续漏极电流(在Vas=10V时):14.0A(TA=+25°C时)/ 11.0A(TA=+70°C时) - 最大连续体二极管正向电流:3A - 脉冲漏极电流(10us脉冲,占空比=1%):80A

功能详解: - 该新一代N沟道增强型MOSFET旨在最小化RDS(ON),同时保持优越的开关性能。

该设备非常适合用于笔记本电脑电池电源管理和负载开关。


应用信息: - 背光电源管理功能 - DC-DC转换器

有关订购信息、标记信息、最大额定值、热特性、电气特性等更多详细信息,请参考数据手册。
DMT6010LSS-13 价格&库存

很抱歉,暂时无法提供与“DMT6010LSS-13”相匹配的价格&库存,您可以联系我们找货

免费人工找货
DMT6010LSS-13
    •  国内价格 香港价格
    • 2500+5.262802500+0.65490
    • 5000+5.173605000+0.64380
    • 7500+5.129007500+0.63825
    • 10000+5.1048110000+0.63524
    • 12500+5.0398012500+0.62715

    库存:0