DMT6018LDR
DUAL N CHANNEL ENHANCEMENT MODE MOSFET
Device
BVDSS
N-Channel
60V
Features
RDS(ON) MAX
ID MAX
TA = +25°C
17mΩ @ VGS = 10V
8.8A
26mΩ @ VGS = 4.5V
6.9A
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Applications
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Description
Power Management Functions
Analog Switch
Case: V-DFN3030-8 (Type H)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – NiPdAu Over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e4
Weight: 0.02 grams (Approximate)
D1
D2
V-DFN3030-8 (Type H)
S2
S2
S2
G2
G1
D2
D1
S1
S1
S1
G2
S1
G1
S2
Pin 1
Top View
Equivalent Circuit
Bottom View
Ordering Information (Note 4)
Part Number
DMT6018LDR-7
DMT6018LDR-13
Notes:
Case
V-DFN3030-8 (Type H)
V-DFN3030-8 (Type H)
Packaging
3000/Tape & Reel
10000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain
很抱歉,暂时无法提供与“DMT6018LDR-7”相匹配的价格&库存,您可以联系我们找货
免费人工找货- 国内价格 香港价格
- 1+13.619411+1.74697
- 10+8.6014010+1.10331
- 100+5.71000100+0.73243
- 500+4.46973500+0.57334
- 1000+4.070411000+0.52212
- 国内价格
- 1+7.85160
- 10+6.42600
- 30+5.64840
- 100+4.76280
- 国内价格 香港价格
- 3000+3.563333000+0.45707
- 6000+3.308086000+0.42433
- 9000+3.178089000+0.40766
- 15000+3.0320315000+0.38892
- 21000+2.9494021000+0.37832