DMT68M8LSS-13

DMT68M8LSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V Features and Benefits RDS(ON) Max ID Max TA = +25°C 8.5mΩ @ VGS = 10V 12.1A 12mΩ @ VGS = 4.5V 10.2A   High Conversion Efficiency Low RDS(ON) – Minimizes On-State Losses    Low Input Capacitance Fast Switching Speed ESD Protected Gate   Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.    High Frequency Switching Synchronous Rectification DC-DC Converters Mechanical Data  Case: SO-8  Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (Approximate)  SO-8 ESD PROTECTED S D S D S D G D D G Gate Protection Diode Top View Internal Schematic Top View S Equivalent Circuit Ordering Information (Note 4) Part Number DMT68M8LSS-13 Notes: Case SO-8 Packaging 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain